------Question for STF27N60M2-EP Please Put your question below------
gfs is not listed in this part’s datasheet.
Edit: Transconductance is answered HERE.
Hello stephen.franks,
I was unable to find the transconductance value on STMicroelectronics’s website, so I will be reaching out to them to see if they can advise. I will post here once I hear back.
Thank you,
Klint
Hi stephen.franks,
The forward transconductance is specified as the following:
It will vary depending on such things as temperature and applied VDS, and where along the ID/VGS curve one takes a measurement, but looking at the curve in Fig.5 on page 6 of the datasheet of the STF27N60M2-EP, it appears to be fairly linear between a VGS of about 4.6V and 5.4V.
So one can estimate transconductance as:
- gfs = ΔID/ΔVGS ≈ (40A - 10A) / (5.4V - 4.6V) = 30A / 0.8V ≈ 37.5
This is of course a ball-park estimate based on looking at the graph, but I believe that estimate should be within 15% ~ 20% of the actual value.
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Greetings stephen.franks,
The response from the manufacturer supports what David_1528 posted earlier. Per the manufacturer:
A gfs value for this MOSFET can be obtained by taking the slope of the transfer characteristic, shown below in Fig. 5 (taken from the STF27N60M2-EP datasheet). In this case, VDS=20 V and the slope is taken at 1/2 the maximum ID value shown on the plot at ID=26A. When we find the slope at that point on the curve, gfs is obtained.
gfs = | dID / dVGS | at VDS=constant
At ID=26A, gfs is approximately 35.9 S for this transfer characteristic.
Regards,
Klint
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