Unlike silicon FETs, which typically specified with a gate-source voltage between 4.5 V and 10 V and an absolute maximum rating of ±20 V. A 100 V GaN FET have much tighter gate-source voltage of 5 V limited to +6 V/-4 V for long-term reliability.
Even small overshoot or undershoot can degrade or damage the device.
Therefore, GaN designs require precisely regulated gate drive voltages, careful timing control, and minimized high-frequency ringing to ensure safe and reliable operation.
Analog Devices’ GaN-optimized controllers
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