They do not currently have plans to release discrete GaN diodes. It should be noted that the current eGaN FETs can be made to act as a diode; there is no physical diode that bypasses the switch in the reverse direction, however, when current is forced from source to drain, the drain voltage falls to the point where it begins to turn the channel on, acting just like a diode. As no minority carriers are present, these devices have no reverse recovery.
Content courtesy of EPC (Efficient Power Conversion) support forum:
For the latest on new product development sign up to receive news and product updates from EPC or by texting “EPC” to 22828.