This Product Selection Guide contains information to help select products in the IGBT Arrays category on DigiKey.com
Insulated-gate bipolar transistors (IGBTs) are high efficiency and fast switching three-terminal power semiconductor devices primarily used as electronic switches. They are used in switching power supplies in high power applications such as variable-frequency drives (VFDs), electric cars, trains, lamp ballasts, and air-conditioners as well as in switching amplifiers – sound systems and industrial control systems. IGBT arrays contain multiple devices in one package in full- or half-bridge configurations.
SelectionCharacteristics
IGBT Type: Indicates distinctions of internal device construction that influence tradeoffs among various aspects of device performance.
Configuration: Indicates which drive archetype the array is designed to use.
Voltage - Collector Emitter Breakdown (Max): Characterizes current flow through a device’s collector terminal when the device is in an “off” state.
Current - Collector (Ic) (Max): The maximum current value the device can sustain at its collector without risking damage.
Power - Max: Typically this represents the maximum power rating to which a device will meet its given specifications. Exceeding this power rating may damage the device and other system components.
Vce(on) (Max) @ Vge, Ic: Characterizes the maximum voltage that appears across a device’s collector and emitter terminals, measured with the indicated values of collector current and applied gate-emitter voltage.
Current - Collector Cutoff (Max): Characterizes current flow through a device’s collector terminal when the device is in an “off” state.
Input Capacitance (Cies) @ Vce: Characterizes the sum of a device’s gate-collector and gate-emitter capacitances, measured with the indicated collector-emitter bias applied.
Operating Temperature: Recommended operating temperature, typically given in a range or as a maximum. Exceeding these temperatures may affect performance or damage the device and other system components.
Mounting Type: Indicates how the device is mounted.
Package / Case: Indicates the type of protective case used on an electronic component to allow easy handling, installation, and protection. This selection was determined to be the closest industry standard applicable to the supplier device packaging. Typically it is best to check the actual dimensions from the datasheet rather than depend on this terminology when designing your circuit.
Supplier Device Package: This is what the manufacturer calls the package of this device. They are manufacturer specific. It is typically best to use the actual dimensions from the datasheets rather than to go by this terminology when designing your circuit.
ProductExamples
| MFR PART # | MMIX4B20N300 |
|---|---|
| DIGI-KEY PART # | MMIX4B20N300-ND |
| MANUFACTURER | IXYS |
| DESCRIPTION | IGBT Array Full Bridge 3000 V 34 A 150 W Surface Mount 24-SMPD |
| DATASHEET | Click Here |
SchematicSymbol
Schematic symbol courtesy of Scheme-it. Please see their website for more information and symbols.
MediaLinks
Videos
650V, 1200V IGBT - MCC’s IGBT offer low conduction loss
Introduction to TRENCHSTOP™ IGBT 7
Articles
Understanding IGBT Data Sheet Parameters - Bourns
Introduction of Field-Stop Shorted-Anode IGBT
BLDC Motor Control with Integrated IGBT Drivers
Process Enhancements Increase IGBT Efficiency for Motor Drive Applications
IGBTs Boost Solar Panel Efficiency
Product Training Modules
IGBT Primer Device - Infineon
IGBT and SLLIMM IPM - STMicroelectronics
Insulated Gate Bipolar Transistors Overview - ROHM
TRENCHSTOP™ 5 Family - Infineon
TechForum
How to Find Replacement BJT, MOSFET, and IGBT Transistors
Gate Driver Component Selection