This Product Selection Guide contains information to help select products in the Single, Pre-Biased Bipolar Transistors category on DigiKey.com
Pre-biased bipolar transistors have internal resistors designed to maintain the device near the bias or operating point with no input signal applied. Transistor biasing allows the transistor to work more efficiently and produce a stable, undistorted output signal. Pre-biased transistors reduce the number of external circuit components required, thereby reducing project costs.
SelectionCharacteristics
Transistor Type: Enumerates product characteristics such as polarity, number of devices incorporated in a package, internal connections among devices, etc.
Current - Collector (Ic) (Max): The maximum current value the device can sustain at its collector without risking damage.
Voltage - Collector Emitter Breakdown (Max): The maximum voltage that can appear between the collector and the emitter of the device without risking damage.
Resistor - Base (R1): Indicates the nominal value of an integrated resistor connected between a transistor’s base terminal and an external pin on the device package.
Resistor - Emitter Base (R2): Indicates the nominal value of an integrated resistor connected between a transistor’s base and emitter terminals.
DC Current Gain (hFE) (Min) @ Ic, Vce: Characterizes the ratio of collector current to base current for a bipolar transistor, under DC test conditions including the indicated values of collector current and collector-emitter voltage. Varies significantly among devices and with operating conditions.
Current - Collector Cutoff (Max): Characterizes current flow through a device’s collector terminal when the device is in an “off” state.
Frequency - Transition: Characterizes a BJT’s frequency response, indicating the frequency at which a device’s current gain falls to a value of one.
Power - Max: Typically this represents the maximum power rating to which a device will meet its given specifications. Exceeding this power rating may damage the device and other system components.
Package / Case: Indicates the type of protective case used on an electronic component to allow easy handling, installation, and protection. This selection was determined to be the closest industry standard applicable to the supplier device packaging. Typically it is best to check the actual dimensions from the datasheet rather than depend on this terminology when designing your circuit.
Supplier Device Package: This is what the manufacturer calls the package of this device. They are manufacturer specific. It is typically best to use the actual dimensions from the datasheets rather than to go by this terminology when designing your circuit.
ProductExamples
| MFR PART # | DDTC143ZCA-7-F |
|---|---|
| DIGI-KEY PART # | DDTC143ZCA-FDITR-ND - Tape & Reel (TR) |
| MANUFACTURER | Diodes Incorporated |
| DESCRIPTION | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SOT-23-3 |
| DATASHEET | Click Here |
| MFR PART # | PDTA123YMB,315 |
|---|---|
| DIGI-KEY PART # | 1727-PDTA123YMB,315TR-ND - Tape & Reel (TR) |
| MANUFACTURER | Nexperia USA Inc. |
| DESCRIPTION | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 180 MHz 250 mW Surface Mount DFN1006B-3 |
| DATASHEET | Click Here |
| MFR PART # | DTC043ZEBTL |
|---|---|
| DIGI-KEY PART # | DTC043ZEBTLTR-ND - Tape & Reel (TR) |
| MANUFACTURER | Rohm Semiconductor |
| DESCRIPTION | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount EMT3F (SOT-416FL) |
| DATASHEET | Click Here |
| MFR PART # | NSB9435T1G |
|---|---|
| DIGI-KEY PART # | 488-NSB9435T1GTR-ND - Tape & Reel (TR) |
| MANUFACTURER | onsemi |
| DESCRIPTION | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 30 V 3 A 110 MHz 720 mW Surface Mount SOT-223 (TO-261) |
| DATASHEET | Click Here |
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MediaLinks
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2N3904 NPN Basic Transistor Guide
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2N3904 NPN Basic Transistor Guide