This Product Selection Guide contains information to help select products in the Bipolar Transistor Arrays category on DigiKey.com
Bipolar transistor arrays incorporate two or more discrete transistors in a shared package, either as electrically separate entities or with interconnections of some form between them being made inside the device package. Arrays in which the devices contained have closely matched or complementary characteristics, the co-packaged character minimizes temperature differences between devices during operation.
SelectionCharacteristics
Transistor Type: Enumerates product characteristics such as polarity, number of devices incorporated in a package, internal connections among devices, etc.
Current - Collector (Ic) (Max): The maximum current value the device can sustain at its collector without risking damage.
Voltage - Collector Emitter Breakdown (Max): The maximum voltage that can appear between the collector and the emitter of the device without risking damage.
Vce Saturation (Max) @ Ib, Ic: Characterizes the voltage drop between a device’s collector and emitter terminals when a device is operated in saturation. Measured with the base and collector current values shown.
Current - Collector Cutoff (Max): Characterizes current flow through a device’s collector terminal when the device is in an “off” state.
DC Current Gain (hFE) (Min) @ Ic, Vce: Characterizes the ratio of collector current to base current for a bipolar transistor, under DC test conditions including the indicated values of collector current and collector-emitter voltage. Varies significantly among devices and with operating conditions.
Power - Max: Typically this represents the maximum power rating to which a device will meet its given specifications. Exceeding this power rating may damage the device and other system components.
Frequency - Transition: Characterizes a BJT’s frequency response, indicating the frequency at which a device’s current gain falls to a value of one.
Operating Temperature: Recommended operating temperature, typically given in a range or as a maximum. Exceeding these temperatures may affect performance or damage the device and other system components.
Mounting Type: Indicates how the device is attached.
Package / Case: Indicates the type of protective case used on an electronic component to allow easy handling, installation, and protection. This selection was determined to be the closest industry standard applicable to the supplier device packaging. Typically it is best to check the actual dimensions from the datasheet rather than depend on this terminology when designing your circuit.
Supplier Device Package: This is what the manufacturer calls the package of this device. They are manufacturer specific. It is typically best to use the actual dimensions from the datasheets rather than to go by this terminology when designing your circuit.
ProductExamples
| MFR PART # | MBT3946DW1T1G |
|---|---|
| DIGI-KEY PART # | MBT3946DW1T1GOSTR-ND - Tape & Reel (TR) |
| MANUFACTURER | onsemi |
| DESCRIPTION | Bipolar (BJT) Transistor Array NPN, PNP 40V 200mA 300MHz, 250MHz 150mW Surface Mount SC-88/SC70-6/SOT-363 |
| DATASHEET | Click Here |
| MFR PART # | PMP4201Y,135 |
|---|---|
| DIGI-KEY PART # | 1727-5851-2-ND - Tape & Reel (TR) |
| MANUFACTURER | Nexperia USA Inc. |
| DESCRIPTION | Bipolar (BJT) Transistor Array 2 NPN (Dual) Matched Pair 45V 100mA 250MHz 300mW Surface Mount 6-TSSOP |
| DATASHEET | Click Here |
| MFR PART # | ULN2804A |
|---|---|
| DIGI-KEY PART # | 497-2357-5-ND |
| MANUFACTURER | STMicroelectronics |
| DESCRIPTION | Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 2.25W Through Hole 18-DIP |
| DATASHEET | Click Here |
| MFR PART # | 2N3810 |
|---|---|
| DIGI-KEY PART # | 2N3810-ND |
| MANUFACTURER | Microchip Technology |
| DESCRIPTION | Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6 |
| DATASHEET | Click Here |
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MediaLinks
Articles
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2N3904 NPN Basic Transistor Guide
TechForum
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