This Product Selection Guide contains information to help select products in the Bipolar Transistor Arrays, Pre-Biased category on DigiKey.com
Pre-biased bipolar transistor arrays incorporate two or more bipolar transistors, along with resistors connected to each transistor in a manner likely to be useful, typically with one resistor between each transistor’s emitter and base terminals, and another connected to each transistor’s base terminal and a user-accessible pin on the device package.
SelectionCharacteristics
Transistor Type: Enumerates product characteristics such as polarity, number of devices incorporated in a package, internal connections among devices, etc.
Current - Collector (Ic) (Max): The maximum current value the device can sustain at its collector without risking damage.
Voltage - Collector Emitter Breakdown (Max): The maximum voltage that can appear between the collector and the emitter of the device without risking damage.
Resistor - Base (R1): Indicates the nominal value of an integrated resistor connected between a transistor’s base terminal and an external pin on the device package.
Resistor - Emitter Base (R2): Indicates the nominal value of an integrated resistor connected between a transistor’s base and emitter terminals.
DC Current Gain (hFE) (Min) @ Ic, Vce: Characterizes the ratio of collector current to base current for a bipolar transistor, under DC test conditions including the indicated values of collector current and collector-emitter voltage. Varies significantly among devices and with operating conditions.
Vce Saturation (Max) @ Ib, Ic: Characterizes the voltage drop between a device’s collector and emitter terminals when a device is operated in saturation. Measured with the base and collector current values shown.
Current - Collector Cutoff (Max): Characterizes current flow through a device’s collector terminal when the device is in an “off” state.
Frequency - Transition: Characterizes a BJT’s frequency response, indicating the frequency at which a device’s current gain falls to a value of one.
Power - Max: Typically this represents the maximum power rating to which a device will meet its given specifications. Exceeding this power rating may damage the device and other system components.
Package / Case: Indicates the type of protective case used on an electronic component to allow easy handling, installation, and protection. This selection was determined to be the closest industry standard applicable to the supplier device packaging. Typically it is best to check the actual dimensions from the datasheet rather than depend on this terminology when designing your circuit.
Supplier Device Package: This is what the manufacturer calls the package of this device. They are manufacturer specific. It is typically best to use the actual dimensions from the datasheets rather than to go by this terminology when designing your circuit.
ProductExamples
MFR PART # | UMH9NTN |
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DIGI-KEY PART # | UMH9NTNTR-ND - Tape & Reel (TR) |
MANUFACTURER | Rohm Semiconductor |
DESCRIPTION | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6 |
DATASHEET | Click Here |
MFR PART # | PUMD3,135 |
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DIGI-KEY PART # | 1727-PUMD3,135TR-ND - Tape & Reel (TR) |
MANUFACTURER | Nexperia USA Inc. |
DESCRIPTION | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP |
DATASHEET | Click Here |
MFR PART # | MUN5135DW1T1G |
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DIGI-KEY PART # | MUN5135DW1T1GOSTR-ND - Tape & Reel (TR) |
MANUFACTURER | onsemi |
DESCRIPTION | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363 |
DATASHEET | Click Here |
MFR PART # | RN2703JE(TE85L,F) |
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DIGI-KEY PART # | RN2703JE(TE85LF)TR-ND - Tape & Reel (TR) |
MANUFACTURER | Toshiba Semiconductor and Storage |
DESCRIPTION | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV |
DATASHEET | Click Here |
MediaLinks
Articles
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TechForum
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