This Product Selection Guide contains information to help select products in the Bipolar RF Transistors category on DigiKey.com
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
SelectionCharacteristics
Transistor Type: Enumerates product characteristics such as polarity, number of devices incorporated in a package, internal connections among devices, etc.
Voltage - Collector Emitter Breakdown (Max): The maximum voltage that can appear between the collector and the emitter of the device without risking damage.
Frequency - Transition: Characterizes a BJT’s frequency response, indicating the frequency at which a device’s current gain falls to a value of one.
Noise Figure (dB Typ @ f): Characterizes degradation in signal-to-noise-ratio experienced by signals passing through a device, and the test frequency at which the characterization is made.
Gain: Characterizes signal power gain achievable using a device as a linear amplifier, under manufacturer-defined test conditions.
Power - Max: Typically this represents the maximum power rating to which a device will meet its given specifications. Exceeding this power rating may damage the device and other system components.
DC Current Gain (hFE) (Min) @ Ic, Vce: Characterizes the ratio of collector current to base current for a bipolar transistor, under DC test conditions including the indicated values of collector current and collector-emitter voltage. Varies significantly among devices and with operating conditions.
Current - Collector (Ic) (Max): The maximum current value the device can sustain at its collector without risking damage.
Operating Temperature: Recommended operating temperature, typically given in a range or as a maximum. Exceeding these temperatures may affect performance or damage the device and other system components.
Mounting Type: Indicates how the device is attached.
Package / Case: Indicates the type of protective case used on an electronic component to allow easy handling, installation, and protection. This selection was determined to be the closest industry standard applicable to the supplier device packaging. Typically it is best to check the actual dimensions from the datasheet rather than depend on this terminology when designing your circuit.
Supplier Device Package: This is what the manufacturer calls the package of this device. They are manufacturer specific. It is typically best to use the actual dimensions from the datasheets rather than to go by this terminology when designing your circuit.
ProductExamples
| MFR PART # | BFR93AWH6327XTSA1 |
|---|---|
| DIGIKEY PART # | BFR93AWH6327XTSA1TR-ND - Tape & Reel (TR) |
| MANUFACTURER | Infineon Technologies |
| DESCRIPTION | RF Transistor NPN 12V 90mA 6GHz 300mW Surface Mount PG-SOT323 |
| DATASHEET | Click Here |
| MFR PART # | MRF314 |
|---|---|
| DIGIKEY PART # | 1465-1176-ND |
| MANUFACTURER | MACOM Technology Solutions |
| DESCRIPTION | RF Transistor NPN 35V 3.4A 30W Chassis Mount 211-07, Style 1 |
| DATASHEET | Click Here |
| MFR PART # | BFU590QX |
|---|---|
| DIGIKEY PART # | 568-11522-2-ND - Tape & Reel (TR) |
| MANUFACTURER | NXP USA Inc. |
| DESCRIPTION | RF Transistor NPN 12V 200mA 8GHz 2W Surface Mount SOT-89-3 |
| DATASHEET | Click Here |
| MFR PART # | 2N5179 PBFREE |
|---|---|
| DIGIKEY PART # | 1514-2N5179PBFREE-ND |
| MANUFACTURER | Central Semiconductor Corp |
| DESCRIPTION | RF Transistor NPN 12V 50mA 2GHz 200mW Through Hole TO-72 |
| DATASHEET | Click Here |
SchematicSymbol
PNP
NPN
Schematic symbol courtesy of Scheme-it. Please see their website for more information and symbols.
MediaLinks
Articles
RF Transistors Offering Remarkable Advances