Bipolar RF Transistors

This Product Selection Guide contains information to help select products in the Bipolar RF Transistors category on DigiKey.com

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.


SelectionCharacteristics

Transistor Type: Enumerates product characteristics such as polarity, number of devices incorporated in a package, internal connections among devices, etc.

Voltage - Collector Emitter Breakdown (Max): The maximum voltage that can appear between the collector and the emitter of the device without risking damage.

Frequency - Transition: Characterizes a BJT’s frequency response, indicating the frequency at which a device’s current gain falls to a value of one.

Noise Figure (dB Typ @ f): Characterizes degradation in signal-to-noise-ratio experienced by signals passing through a device, and the test frequency at which the characterization is made.

Gain: Characterizes signal power gain achievable using a device as a linear amplifier, under manufacturer-defined test conditions.

Power - Max: Typically this represents the maximum power rating to which a device will meet its given specifications. Exceeding this power rating may damage the device and other system components.

DC Current Gain (hFE) (Min) @ Ic, Vce: Characterizes the ratio of collector current to base current for a bipolar transistor, under DC test conditions including the indicated values of collector current and collector-emitter voltage. Varies significantly among devices and with operating conditions.

Current - Collector (Ic) (Max): The maximum current value the device can sustain at its collector without risking damage.

Operating Temperature: Recommended operating temperature, typically given in a range or as a maximum. Exceeding these temperatures may affect performance or damage the device and other system components.

Mounting Type: Indicates how the device is attached.

Package / Case: Indicates the type of protective case used on an electronic component to allow easy handling, installation, and protection. This selection was determined to be the closest industry standard applicable to the supplier device packaging. Typically it is best to check the actual dimensions from the datasheet rather than depend on this terminology when designing your circuit.

Supplier Device Package: This is what the manufacturer calls the package of this device. They are manufacturer specific. It is typically best to use the actual dimensions from the datasheets rather than to go by this terminology when designing your circuit.

ProductExamples

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MFR PART # BFR93AWH6327XTSA1
DIGI-KEY PART # BFR93AWH6327XTSA1TR-ND - Tape & Reel (TR)
MANUFACTURER Infineon Technologies
DESCRIPTION RF Transistor NPN 12V 90mA 6GHz 300mW Surface Mount PG-SOT323
DATASHEET Click Here

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MFR PART # MRF314
DIGI-KEY PART # 1465-1176-ND
MANUFACTURER MACOM Technology Solutions
DESCRIPTION RF Transistor NPN 35V 3.4A 30W Chassis Mount 211-07, Style 1
DATASHEET Click Here

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MFR PART # BFU590QX
DIGI-KEY PART # 568-11522-2-ND - Tape & Reel (TR)
MANUFACTURER NXP USA Inc.
DESCRIPTION RF Transistor NPN 12V 200mA 8GHz 2W Surface Mount SOT-89-3
DATASHEET Click Here

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MFR PART # 2N5179 PBFREE
DIGI-KEY PART # 1514-2N5179PBFREE-ND
MANUFACTURER Central Semiconductor Corp
DESCRIPTION RF Transistor NPN 12V 50mA 2GHz 200mW Through Hole TO-72
DATASHEET Click Here

SchematicSymbol

PNP
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NPN
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Schematic symbol courtesy of Scheme-it. Please see their website for more information and symbols.

MediaLinks

Articles
RF Transistors Offering Remarkable Advances

If you have any general questions on the specifications for selecting Bipolar RF Transistors, please reply using the button below. If you have questions on specific Bipolar RF Transistors please post those questions in the Discrete Semiconductor Products category.