These are a variety of options that would appear to have dynamic properties in the same ballpark and similar/better base specs.
Please note that when such a device fails, it’s often because of or the cause of failures elsewhere that are less obvious.
ID is a notoriously misleading/non-intuitive spec among FETs as described here. It is perhaps best ignored in consideration of other device specifications.
The VGS (max) rating of both would seem substantially less than the 400V of the reference device; as such they would be unsuitable.