Optodiode AXUV100G technical request

I am considering how to install the Opto diode AXUV100G and removing the heat efficiently.

I am installing it at an X-Ray beamline at a synchrotron facility, thus the optodiode will measure an X-Ray beam with the following characteristics:
• a power of 70W and density of about 16 W/mm2
• energy is 25-1500 eV

My actual question is: how much energy do I need to remove from the diode to avoid overheating?

This leads to the following question: How much of the energy does the diode and casing absorp from the beam? If the answer to this question is a very low %, I guess we do not have to continue answering the next questions. But if the absorption is significant, we have to answer:

  1. What is the diode material and thickness?

  2. What is the casing material and thickness?

  3. How is the diode attached to the casing?

With this information I can evaluate how much heat I must remove to avoid overheating (I suppose the maximum design temperature should be 80 degC as per the datasheet since the diode will be installed in vacuum (e-9 mbar), can you confirm this? what is damaged if overheated beyond 80 degC?)



If I’m reading this document correctly, the device would be absorbently opaque to x-rays at the energies in question, so the required cooling would essentially be equal to the incident beam energy. Exact thicknesses of the absorptive silicon layer would appear to be somewhat variable and a thing which may need to be evaluated on a unit-by-unit basis in cases where it is of interest.

Elevated temperatures promote chemical reaction of the sensor surface with any trace reactive species that may be present, potentially causing permanent changes in device responsivity in addition to the temperature-dependent behaviors of the device itself. Such effects do of course occur on a continuum, and the 80°C figure should not be considered a magic number; it’s not as if everything is perfect at 79.99999 and the device self-destructs at 80.00001.