This Product Selection Guide contains information to help select products in the RF FETs, MOSFETs category on DigiKey.com
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
SelectionCharacteristics
Technology: Indicates which among several common transistor construction methods a device employs.
Configuration: Indicates the style and configuration of the device.
Frequency: This represents the frequency range to which a device will meet its given specifications. Exceeding this frequency range may cause erratic performance or damage the device and other system components.
Gain: Characterizes signal power gain achievable using a device as a linear amplifier, under manufacturer-defined test conditions.
Voltage - Test: The drain-source voltage applied during measurement of other device characteristics.
Current Rating - Amps: Typically this represents the maximum current to which a device will meet its given specifications. Exceeding this current may damage the device and/or other system components.
Noise Figure: Characterizes SNR degradation caused by a component, given as the ratio (expressed in dB) between actual output noise power and portion thereof that is caused by the thermal noise of the input termination resistance at a standard temperature.
Current - Test: Indicates the amount of current flow through a device used by a manufacturer as a test condition for characterization of one or more other device parameters.
Power - Output: The maximum amount of power that can be output by the device.
Voltage - Rated: Typically this represents the maximum voltage rating to which a device will meet its given specifications. Exceeding this voltage rating may damage the device and other system components.
Mounting Type: Indicates how the device is attached.
Package / Case: Indicates the type of protective case used on an electronic component to allow easy handling, installation, and protection. This selection was determined to be the closest industry standard applicable to the supplier device packaging. Typically it is best to check the actual dimensions from the datasheet rather than depend on this terminology when designing your circuit.
Supplier Device Package: This is what the manufacturer calls the package of this device. They are manufacturer specific. It is typically best to use the actual dimensions from the datasheets rather than to go by this terminology when designing your circuit.
ProductExamples
| MFR PART # | MMBF4416A |
|---|---|
| DIGI-KEY PART # | MMBF4416ATR-ND - Tape & Reel (TR) |
| MANUFACTURER | onsemi |
| DESCRIPTION | RF Mosfet 15 V 5 mA 400MHz SOT-23-3 |
| DATASHEET | Click Here |
| MFR PART # | CE3512K2-C1 |
|---|---|
| DIGI-KEY PART # | CE3512K2-C1TR-ND - Tape & Reel (TR) |
| MANUFACTURER | CEL |
| DESCRIPTION | RF Mosfet 2 V 10 mA 12GHz 13.7dB 125mW 4-Micro-X |
| DATASHEET | Click Here |
| MFR PART # | MRF166C |
|---|---|
| DIGI-KEY PART # | 1465-1161-ND |
| MANUFACTURER | MACOM Technology Solutions |
| DESCRIPTION | RF Mosfet 28 V 25 mA 30MHz ~ 500MHz 16dB 20W 319-07, Style 3 |
| DATASHEET | Click Here |
| MFR PART # | BLM9D1822-30BZ |
|---|---|
| DIGI-KEY PART # | 1603-BLM9D1822-30BZTR-ND - Tape & Reel (TR) |
| MANUFACTURER | Ampleon USA Inc. |
| DESCRIPTION | RF Mosfet 28 V 110 mA 1.8GHz ~ 2.2GHz 29.3dB 45.9dBm 20-PQFN (8x8) |
| DATASHEET | Click Here |
SchematicSymbol
Schematic symbol courtesy of Scheme-it. Please see their website for more information and symbols.
MediaLinks
Articles
RF Transistors Offering Remarkable Advances
MOSFET RF Amplifiers - Microsemi