This Product Selection Guide contains information to help select products in the FET, MOSFET Arrays category on DigiKey.com
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
SelectionCharacteristics
Technology: Indicates which among several common transistor construction methods a device employs.
Configuration: Indicates the number and channel type of FETs incorporated within an array, and describes internal connections among them.
FET Feature: Indicates distinguishing aspects of device construction or operating characteristics.
Drain to Source Voltage (Vdss): The absolute maximum voltage between drain and source terminals that a device is rated to withstand. Magnitude of manufacturer’s ratings shown.
Current - Continuous Drain (Id) @ 25°C: Manufacturer’s indicated maximum drain current(s), subject to maintenance of a case (Tc) or ambient (Ta) temperature of 25°C. Allowable values in practice are subject to thermal limitations and may be much less than those indicated.
Rds On (Max) @ Id, Vgs: The manufacturer’s specified maximum on-state drain-source resistance(s) measured under the indicated test conditions. See datasheets for applicable thermal test conditions.
Vgs(th) (Max) @ Id: Characterizes the magnitude of the gate-source voltage at which a device turns “on” sufficiently to allow a drain current of the indicated magnitude to flow.
Gate Charge (Qg) (Max) @ Vgs: Characterizes the amount of electrical charge required to change an applied gate-source voltage from zero to the value shown, under manufacturer-defined test conditions.
Input Capacitance (Ciss) (Max) @ Vds: Characterizes the sum of a device’s parasitic gate-to-drain and gate-to-source capacitances, measured at the indicated value of drain-source voltage.
Power - Max: Typically this represents the maximum power rating to which a device will meet its given specifications. Exceeding this power rating may damage the device and other system components.
Operating Temperature: Recommended operating temperature, typically given in a range or as a maximum. Exceeding these temperatures may affect performance or damage the device and other system components.
Mounting Type: Indicates how the device is attached.
Package / Case: Indicates the type of protective case used on an electronic component to allow easy handling, installation, and protection. This selection was determined to be the closest industry standard applicable to the suppliers device packaging. Typically it is best to check the actual dimensions from the datasheet rather than depend on this terminology when designing your circuit.
Supplier Device Package: This is what the manufacturer calls the package of this device. They are manufacturer specific. It is typically best to use the actual dimensions from the datasheets rather than to go by this terminology when designing your circuit.
ProductExamples
| MFR PART # | SSM6N7002KFU,LF |
|---|---|
| DIGIKEY PART # | SSM6N7002KFULFTR-ND - Tape & Reel (TR) |
| MANUFACTURER | Toshiba Semiconductor and Storage |
| DESCRIPTION | Mosfet Array 60V 300mA 285mW Surface Mount US6 |
| DATASHEET | Click Here |
| MFR PART # | BSM300D12P2E001 |
|---|---|
| DIGIKEY PART # | BSM300D12P2E001-ND |
| MANUFACTURER | Rohm Semiconductor |
| DESCRIPTION | Mosfet Array 1200V (1.2kV) 300A (Tc) 1875W Chassis Mount Module |
| DATASHEET | Click Here |
| MFR PART # | EPC2106 |
|---|---|
| DIGIKEY PART # | 917-1110-2-ND - Tape & Reel (TR) |
| MANUFACTURER | EPC |
| DESCRIPTION | Mosfet Array 100V 1.7A Surface Mount Die |
| DATASHEET | Click Here |
| MFR PART # | SLA5064 |
|---|---|
| DIGIKEY PART # | SLA5064-ND |
| MANUFACTURER | Sanken Electric USA Inc. |
| DESCRIPTION | Mosfet Array 60V 10A 5W Through Hole 12-SIP |
| DATASHEET | Click Here |
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MediaLinks
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