This Product Selection Guide contains information to help select products in the JFETs category on DigiKey.com
Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.
SelectionCharacteristics
FET Type: FET channel type; influences the polarity of voltages applied to the device in typical use.
Voltage - Breakdown (V(BR)GSS): The maximum voltage that may be applied between the gate and source terminals of a device without causing damage.
Drain to Source Voltage (Vdss): The absolute maximum voltage between drain and source terminals that a device is rated to withstand. Magnitude of manufaturer’s ratings shown.
Current - Drain (Idss) @ Vds (Vgs=0): Minimum drain current expected with Vgs=0 and drain-source voltage indicated. Actual values vary significantly among devices and with temperature.
Current Drain (Id) - Max: Maximum allowed current flow through the device.
Voltage - Cutoff (VGS off) @ Id: The typical magnitude of a gate-source voltage that results in a reduction of drain current to the indicated value.
Input Capacitance (Ciss) (Max) @ Vds: Characterizes the sum of a device’s parasitic gate-to-drain and gate-to-source capacitances, measured at the indicated value of drain-source voltage.
Resistance - RDS(On): Typical resistance between the drain and source terminals of the device in its “on” state. (Vgs=0, |Vds|= small)
Power - Max: Typically this represents the maximum power rating to which a device will meet its given specifications. Exceeding this power rating may damage the device and other system components.
Operating Temperature: Recommended operating temperature, typically given in a range or as a maximum. Exceeding these temperatures may affect performance or damage the device and other system components.
Mounting Type: Indicates how the device is mounted.
Package / Case: Indicates the type of protective case used on an electronic component to allow easy handling, installation, and protection. This selection was determined to be the closest industry standard applicable to the supplier device packaging. Typically it is best to check the actual dimensions from the datasheet rather than depend on this terminology when designing your circuit.
Supplier Device Package: This is what the manufacturer calls the package of this device. They are manufacturer specific. It is typically best to use the actual dimensions from the datasheets rather than to go by this terminology when designing your circuit.
ProductExamples
| MFR PART # | MMBFJ112 |
|---|---|
| DIGI-KEY PART # | MMBFJ112TR-ND - Tape & Reel (TR) |
| MANUFACTURER | onsemi |
| DESCRIPTION | JFET N-Channel 35 V 350 mW Surface Mount SOT-23-3 |
| DATASHEET | Click Here |
| MFR PART # | 2N4392 PBFREE |
|---|---|
| DIGI-KEY PART # | 1514-2N4392PBFREE-ND |
| MANUFACTURER | Central Semiconductor Corp |
| DESCRIPTION | JFET N-Channel 40 V 1.8 W Through Hole TO-18 |
| DATASHEET | Click Here |
| MFR PART # | UF3N170400B7S |
|---|---|
| DIGI-KEY PART # | 2312-UF3N170400B7STR-ND - Tape & Reel (TR) |
| MANUFACTURER | Qorvo |
| DESCRIPTION | JFET N-Channel 1700 V 6.8 A 68 W Surface Mount D2PAK-7 |
| DATASHEET | Click Here |
| MFR PART # | LS844 SOT-23 6L ROHS |
|---|---|
| DIGI-KEY PART # | 4004-LS844SOT-236LROHSTR-ND - Tape & Reel (TR) |
| MANUFACTURER | Linear Integrated Systems, Inc. |
| DESCRIPTION | JFET 2 N-Channel (Dual) 60 V 50 mA 400 mW Surface Mount SOT-23-6 |
| DATASHEET | Click Here |
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