Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
IGBT Type: Indicates distinctions of internal device construction that influence tradeoffs among various aspects of device performance.
Voltage - Collector Emitter Breakdown (Max): The maximum voltage value the device can sustain at its collector without risking damage.
Current - Collector (Ic) (Max): The maximum current value the device can sustain at its collector without risking damage.
Current - Collector Pulsed (Icm): Maximum allowable current flow under short-term transient conditions defined by the manufacturer. Subject to de-rating based on thermal considerations.
Vce(on) (Max) @ Vge, Ic: Characterizes the maximum voltage that appears across a device’s collector and emitter terminals, measured with the indicated values of collector current and applied gate-emitter voltage.
Power - Max: Typically this represents the maximum power rating to which a device will meet its given specifications. Exceeding this power rating may damage the device and other system components.
Switching Energy: Characterizes power dissipation in a device during switching events, based on the test conditions indicated.
Input Type: Indicates the type of signal voltage used to control the device.
Gate Charge: The amount of charge that must be supplied to the gate terminal to achieve switching, under manufacturer-defined test conditions.
Td (on/off) @ 25°C: Delay time; characterizes the time between application of a gate signal and a corresponding change in collector current under the indicated test conditions.
Test Condition: Indicates collector-emitter voltage, collector current, series gate resistance, and gate-emitter drive voltage conditions used for measurement of dynamic device characteristics including switching energy and delay times.
Reverse Recovery Time (trr): The amount of time required for a diode to transition from a forward-conducting to a reverse-blocking state, during which time current may flow through the device in the reverse direction. Measured under manufacturer-defined test conditions.
Operating Temperature: Recommended operating temperature, typically given in a range or as a maximum. Exceeding these temperatures may affect performance or damage the device and other system components.
Mounting Type: Indicates how the device is attached.
Package / Case: Indicates the type of protective case used on an electronic component to allow easy handling, installation, and protection. This selection was determined to be the closest industry standard applicable to the supplier device packaging. Typically it is best to check the actual dimensions from the datasheet rather than depend on this terminology when designing your circuit.
Supplier Device Package: This is what the manufacturer calls the package of this device. They are manufacturer specific. It is typically best to use the actual dimensions from the datasheets rather than to go by this terminology when designing your circuit.
|MFR PART #||IKB20N60TATMA1|
|DIGI-KEY PART #||IKB20N60TATMA1TR-ND - Tape & Reel (TR)|
|DESCRIPTION||IGBT Trench Field Stop 600 V 40 A 166 W Surface Mount PG-TO263-3-2|
|MFR PART #||IXGR48N60C3D1|
|DIGI-KEY PART #||IXGR48N60C3D1-ND|
|DESCRIPTION||IGBT PT 600 V 56 A 125 W Through Hole ISOPLUS247™|
|MFR PART #||STGW30H65FB|
|DIGI-KEY PART #||497-14467-5-ND|
|DESCRIPTION||IGBT Trench Field Stop 650 V 30 A 260 W Through Hole TO-247|
|MFR PART #||RGPZ10BM40FHTL|
|DIGI-KEY PART #||RGPZ10BM40FHTLTR-ND - Tape & Reel (TR)|
|DESCRIPTION||IGBT 460 V 20 A 107 W Surface Mount TO-252|
Schematic symbol courtesy of Scheme-it. Please see their website for more information and symbols.
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