Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
IGBT Type: Indicates distinctions of internal device construction that influence tradeoffs among various aspects of device performance.
Configuration: Indicates the circuit topology of the module, defining its outputs and behavior.
Voltage - Collector Emitter Breakdown (Max): The maximum voltage value the device can sustain at its collector without risking damage.
Current - Collector (IC) (Max): The maximum current value the device can sustain at its collector without risking damage.
Power - Max: Typically this represents the maximum power rating to which a device will meet its given specifications. Exceeding this power rating may damage the device and other system components.
Vce(on) (Max) @ Vge, Ic: Characterizes the maximum voltage that appears across a device’s collector and emitter terminals, measured with the indicated values of collector current and applied gate-emitter voltage.
Current - Collector Cutoff (Max): Characterizes current flow through a device’s collector terminal when the device is in an “off” state.
Input Capacitance (Cies) @ Vce: Characterizes the sum of a device’s gate-collector and gate-emitter capacitances, measured with the indicated collector-emitter bias applied.
Input: Indicates which type of input voltage the device is designed to accept.
NTC Thermistor: Indicates whether or not a device incorporates an NTC thermistor to facilitate monitoring of device temperature.
Operating Temperature: Recommended operating temperature, typically given in a range or as a maximum. Exceeding these temperatures may affect performance or damage the device and other system components.
Mounting Type: Indicates how the device is attached.
Package / Case: Indicates the type of protective case used on an electronic component to allow easy handling, installation, and protection. This selection was determined to be the closest industry standard applicable to the supplier device packaging. Typically it is best to check the actual dimensions from the datasheet rather than depend on this terminology when designing your circuit.
Supplier Device Package: This is what the manufacturer calls the package of this device. They are manufacturer specific. It is typically best to use the actual dimensions from the datasheets rather than to go by this terminology when designing your circuit.
|MFR PART #||IXXN110N65B4H1|
|DIGI-KEY PART #||IXXN110N65B4H1-ND|
|DESCRIPTION||IGBT Module PT Single 650 V 215 A 750 W Chassis Mount SOT-227B|
|MFR PART #||FZ400R12KE4HOSA1|
|DIGI-KEY PART #||FZ400R12KE4HOSA1-ND|
|DESCRIPTION||IGBT Module Trench Field Stop Single 1200 V 400 A 2400 W Chassis Mount Module|
|MFR PART #||NXH450B100H4Q2F2PG|
|DIGI-KEY PART #||488-NXH450B100H4Q2F2PG-ND|
|DESCRIPTION||IGBT Module 2 Independent 1000 V 101 A 234 W Chassis Mount 56-PIM (93x47)|
|MFR PART #||APTGT200DU120G|
|DIGI-KEY PART #||APTGT200DU120G-ND|
|DESCRIPTION||IGBT Module Trench Field Stop Dual, Common Source 1200 V 280 A 890 W Chassis Mount SP6|
Schematic symbol courtesy of Scheme-it. Please see their website for more information and symbols.
Understanding IGBT Data Sheet Parameters - Bourns
BLDC Motor Control with Integrated IGBT Drivers
Process Enhancements Increase IGBT Efficiency for Motor Drive Applications
IGBTs Boost Solar Panel Efficiency